Method for forming a contact during the formation of a semicondu

Details Method for forming a contact during the formation of a semicondu Method for forming a contact during the formation of a semicondu

1995-07-10

1997-11-11

Niebling, John

Fishing, trapping, and vermin destroying

437228, 437978, 437 50, H01L 2144

Patent

active

056863578

ABSTRACT:
A method for forming a semiconductor device comprises the steps of forming first and second conductive lines having a space therebetween over a substrate, said first and second conductive lines each having a sidewall. A conductive spacer is formed over each sidewall, and an insulation layer is formed over the conductive spacers. First and second portions of the insulation is removed to form first and second openings therein, thereby exposing the spacers. The exposed portions of the spacers are removed. The conductive spacers form a conductive path between the first and second openings which would short any conductor formed in the first and second openings. To prevent shorting, a second protective layer is formed within the first and second openings which covers a portion of the spacers to remove the conductive path.

REFERENCES:
patent: 5114879 (1992-05-01), Madan
patent: 5146291 (1992-09-01), Watabe et al.
patent: 5264391 (1993-11-01), Son et al.
S. Wolf, "Silicon Processing for the VLSI Era vol. 2" Lettice Press, Calif. (1990) p. 199.

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