Fabrication of a thin film transistor and production of a liquid

Details Fabrication of a thin film transistor and production of a liquid Fabrication of a thin film transistor and production of a liquid

1995-04-14

1997-11-11

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437109, 437112, 437233, 437937, 117 89, 117 92, 117 93, 117102, 117103, H01L 21705

Patent

active

056863497

ABSTRACT:
A thin film transistor includes: an insulating film having a surface; a semiconductor film formed on the surface of the insulating film; a source electrode and a drain electrode which are in contact with the semiconductor film; and a gate electrode which is electrically insulated from the semiconductor film. In the thin film transistor, a portion of the semiconductor film at distances of less than 500 angstroms from the surface of the insulating film contains at least silicon including a microcrystalline structure having a conductivity of 5.times.10.sup.-9 S/cm or more. Also, a method for fabricating such a thin film transistor is disclosed. The method includes a step of forming a semiconductor film including a silicon layer having a microcrystalline structure by repeatedly performing the following steps (1) and (2): (1) forming a silicon layer on an insulating film by decomposing a material gas including Si which is introduced into a reaction chamber of a plasma chemical vapor deposition apparatus; and (2) microcrystallizing the silicon layer by introducing the hydrogen gas into the chamber to perform a hydrogen plasma treatment for the silicon layer.

REFERENCES:
patent: 4803139 (1989-02-01), Yoshizawa et al.
patent: 4894349 (1990-01-01), Saito et al.
patent: 5151296 (1992-09-01), Tokunaga
patent: 5194398 (1993-03-01), Miyachi et al.
patent: 5242530 (1993-09-01), Batey et al.
patent: 5288658 (1994-02-01), Ishihara
Japanese Patent Publication of 60-98680, published on Jun. 1, 1985.
Japanese Patent Publication of 61-59873, published on Mar. 27, 1986.
Japanese Patent Abstract of JP4137525, published on May 12, 1992.
Japanese Patent Abstract of JP4266019, published on Sep. 22, 1992.
Otobe et al., Jpn. J. Appl. Appl. Phys., vol. 31, pp. 1948-1952(1992).
K. Nomoto et al., Japanese Journal of Applied Physics, vol. 29, No. 8, pp. L1372-L1375 (1990).
Nakazawa et al., Japanese Journal of Applied Physics, vol. 28, No. 4, pp. 569-572 (1989).
Johnson et al., Apply. Phys. Lett. 53, 17 (1988).
Miyazaki, S., Solar Energy Materials, 11 85-95 (1984).
Matsuda, A., Journal of Non-Crystalline Solids 59 & 60, pp. 767-774 (1983).
Y. Toyoshima, et al., J. Non-Cryst. Solids, 14 (1989) 819, "Lattice Orientation of Microcrystallites in Microcrystalline Si:H", May 1989.
A. Asano, Appl. Phys. Lett., 56 (6) (1990) 533, "Effects of Hydrogen Atom on . . . Microcrystalline Silicon . . . ", Feb. 1990.
H. Shirai et al., Jpn. J. Appl. Phys., 30(4B)(1991) L679 "Role of atomic hydrogen during growth of a-Si:H in the chemical annealing" Apr. 1991.
H. Shirai et al., Tech. Digest of Int'l. PVSEC-5 (Kyoto, Japan, 1990), Session A-IpB-2, "The concept of chamical annealing . . . ", Nov. 1990.
D. Das et al., Jpn. J. Appl. Phys., 30(2B)(1991) L239, "Narrow band gap a-Si:H . . . by chemical annealing", Feb. 1991.

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