Method of fabricating an electrically alterable resistive compon

Details Method of fabricating an electrically alterable resistive compon Method of fabricating an electrically alterable resistive compon

1995-11-27

1997-11-11

Tsai, Jey

Fishing, trapping, and vermin destroying

437922, H01L 2170, H01L 2700

Patent

active

056863411

ABSTRACT:
A memory cell includes a pair of spaced apart conductors on an insulating layer, and a novel electrically alterable resistive component between the conductors. This resistive component consist essentially of Germanium, having a crystalline grain size which is smaller than polycrystalline; and the Germanium switches from a high resistance to a low resistance upon the application of a threshold voltage across the conductors.

REFERENCES:
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4404581 (1983-09-01), Tam et al.
patent: 4599705 (1986-07-01), Holmberg et al.

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