Method of making SRAM cell with thin film transistor using two p

Details Method of making SRAM cell with thin film transistor using two p Method of making SRAM cell with thin film transistor using two p

1996-06-10

1997-11-11

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 48, 437200, H01L 218244

Patent

active

056863349

ABSTRACT:
A TFT formed on a semiconductor substrate of a first conductivity type, includes a first doped portion of a polysilicon layer over FOX regions and a first insulating layer. A buried contact extends through the first portion of a polysilicon layer and the first insulating layer to the surface of the substrate adjacent to a FOX region. A second doped portion of the polysilicon layer overlies the first portion and forms a buried contact between the second portion and the substrate. The polysilicon layer forms a gate electrode and a conductor from the buried contact. Doped source/drain regions in the substrate are juxtaposed with the gate electrode. An interelectrode dielectric layer over the gate electrode and the conductor has a gate opening therethrough down to the substrate. A gate oxide layer is formed on the surface of the substrate at the gate opening. A semiconductor film extends over the interelectrode dielectric layer and over the surface of the substrate through the gate opening. A doped channel region is formed between source/drain regions in the semiconductor film above the gate opening, and above the gate opening of a TFT, with the doped region therebelow comprising the gate of the TFT.

REFERENCES:
patent: 4980732 (1990-12-01), Okazawa
patent: 5151374 (1992-09-01), Wu
patent: 5196233 (1993-03-01), Chan et al.
patent: 5198379 (1993-03-01), Adan
patent: 5286663 (1994-02-01), Manning

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