Nonvolatile semiconductor memory device and method of producing

Details Nonvolatile semiconductor memory device and method of producing Nonvolatile semiconductor memory device and method of producing

1996-10-22

1997-11-11

Graybill, David

Fishing, trapping, and vermin destroying

437 52, 437 69, H61L 218247

Patent

active

056863330

ABSTRACT:
In a nonvolatile semiconductor memory device and a method of producing the same, the nonvolatile semiconductor memory device includes a semiconductor substrate of a first conductivity type, a pair of spaced source/drain diffusion layers of a second conductivity type different from the first conductivity type, a floating gate electrode formed on a channel region disposed between the pair of source/drain diffusion layers in the surface of the semiconductor substrate in an insulated relationship with the channel region, and a control gate electrode formed on the floating gate electrode in on insulated relationship with the floating gate electrode wherein a part of the control gate electrode to extend beyond a side of the floating gate electrode to an underside thereof.

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Kume et al., A 1.28.mu.m.sup.2 Contactless Memory Cell Technology for a 3V Only 64M Bit EEPROM, IEDM 92-991, pp.24.7.1-24.7.3, 1992, month unknown.

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