Method of making thin film transistor

Details Method of making thin film transistor Method of making thin film transistor

1995-06-07

1997-11-11

Niebling, John

Fishing, trapping, and vermin destroying

437919, 437 50, 437 51, H01L 2184, H01L 21265

Patent

active

056863268

ABSTRACT:
A thin film transistor comprises a gate electrode, an insulating layer and a semiconductor layer formed and laminated on an insulating substrate, said insulating layer and said semiconductor layer having the same planar pattern.

REFERENCES:
patent: 4425572 (1984-01-01), Takafuji et al.
patent: 4459739 (1984-07-01), Shepherd et al.
patent: 4582395 (1986-04-01), Morozumi
patent: 4609930 (1986-09-01), Yamazaki
patent: 4646424 (1987-03-01), Parks et al.
patent: 4684435 (1987-08-01), Kishi et al.
patent: 4958205 (1990-09-01), Takeda et al.
patent: 4963955 (1990-10-01), Hatanaka et al.
patent: 5188974 (1993-02-01), Mochizuki
patent: 5462887 (1995-10-01), Gluck

Affiliated with

Also associated with

Rating

Method of making thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1228366