Method of making a variable resistance polysilicon conductor for

Details Method of making a variable resistance polysilicon conductor for Method of making a variable resistance polysilicon conductor for

1994-06-27

1996-05-07

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437 52, 437918, 148DIG136, H01L 2170, H01L 2700

Patent

active

055146171

ABSTRACT:
A device and a method of manufacture of a semiconductor device on a semiconductor substrate including an SRAM cell with a resistor comprises forming a first polycrystalline silicon containing layer on the semiconductor substrate, patterning and etching the first polycrystalline silicon containing layer to form steps on either side thereof, forming a dielectric layer over the first polycrystalline silicon containing layer with the steps on either side of the first polycrystalline silicon containing layer, forming a blanket of a second polycrystalline silicon containing layer extending over the interpolysilicon layer, and ion implanting the second polycrystalline silicon containing layer in a blanket implant of a light dose of dopant including ion implanting resistive regions with far higher resistivity in the regions over the steps.

REFERENCES:
patent: 4408385 (1983-10-01), Mohan Rao et al.
patent: 5200356 (1993-04-01), Tanaka
patent: 5268325 (1993-12-01), Spinner, III et al.
patent: 5275963 (1994-01-01), Cederkaum et al.

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