Vertical channel silicon carbide metal-oxide-semiconductor field

Details Vertical channel silicon carbide metal-oxide-semiconductor field Vertical channel silicon carbide metal-oxide-semiconductor field

1995-03-15

1996-05-07

Fourson, George

Fishing, trapping, and vermin destroying

437100, H01L 21265, H01L 2120

Patent

active

055146040

ABSTRACT:
A MOSFET includes a first SiC semiconductor contact layer, a SiC semiconductor channel layer supported by the first SiC contact layer, and a second SiC semiconductor contact layer supported by the channel layer. The second contact and channel layers are patterned to form a plurality of gate region grooves therethrough. Each of the gate region grooves includes a base surface and side surfaces which are covered with groove oxide material. A plurality of metal gate layers are provided, each being supported in a respective one of the plurality of grooves. A plurality of deposited oxide layers are provided, each in a respective one of the grooves so as to be supported by a respective one of the plurality of metal gate layers. A first metal contact layer is applied to the surface of the first SiC contact layer, and a second metal contact layer is applied to a portion of the surface of the second SiC contact layer.

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