Manufacturing method for diamond semiconductor device

Details Manufacturing method for diamond semiconductor device Manufacturing method for diamond semiconductor device

1994-05-06

1996-05-07

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437100, 437165, H01L 21223

Patent

active

055146031

ABSTRACT:
A process of forming a semiconductor which allows n type doping to be applied to a diamond semiconductor layer is carried out so as to form a diamond semiconductor layer on a substrate, forming a layer of SiO.sub.2 over the diamond semiconductor layer and forming a resist pattern (14) over the SiO.sub.2 layer. Etching processing of the SiO.sub.2 layer via the resist pattern is carried out. Then, the exposed diamond layer is subjected to doping process under the following conditions; N.sub.2 =30.sub.SCCM', 1.33 Pa, 100.degree. C., microwave 850 W (2.45 GHz), RF bias 0 W, pulse duty ratio 1:2, a pulse type supply being used for microwave irradiation. Damage to the material by this process imparts high density, doping to the diamond layer. High saturation doping is possible according to this process.

REFERENCES:
patent: 4465529 (1984-08-01), Arima et al.
patent: 4755483 (1988-07-01), Haku et al.
patent: 4937205 (1990-06-01), Nakayama et al.
patent: 5030580 (1991-07-01), Furukawa et al.
patent: 5270250 (1993-12-01), Murai et al.

Affiliated with

Also associated with

Rating

Manufacturing method for diamond semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method for diamond semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method for diamond semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1226826