Electrophotographic photoreceptor with amorphous Si-Ge layer

Details Electrophotographic photoreceptor with amorphous Si-Ge layer Electrophotographic photoreceptor with amorphous Si-Ge layer

1994-05-27

1996-05-07

Martin, Roland

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 65, 430 67, G03G 5082, G03G 514, G03G 5147

Patent

active

055145078

ABSTRACT:
An electrophotographic photoreceptor for positive electrification comprising at least an electroconductive layer, a charge injection blocking layer, a photoconductive layer and a surface layer. The photoconductive layer comprises a layer having an amorphous silicon layer containing one or more of hydrogen, halogen and a Group III element for controlling electroconductivity and layer having an amorphous silicon germanium layer containing at least hydrogen, halogen and a Group III element. The charge injection blocking layer comprises an amorphous silicon layer containing hydrogen and a Group III element in an amount of equal or less than 1000 ppm. The electrophotographic photoreceptor has excellent electrification characteristics with dark and light sensitivities, stability against repetitive use and may be utilized as a photoreceptor for a semiconductor laser beam printer.

REFERENCES:
patent: 4863820 (1989-09-01), Osawa
patent: 4992348 (1991-02-01), Hayakawa et al.

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