Oriented ferroelectric thin film

Stock material or miscellaneous articles – Composite – Of inorganic material

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428446, 428701, 428702, 505191, 505873, 257613, 117948, 117949, 365145, B32B 1800

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055144845

ABSTRACT:
An orientative ferroelectric thin film has such a structure that an epitaxial or orientative buffer layer having a double layer structure constituted by two layers is formed on a semiconductor single crystal (100) substrate, and an epitaxial or orientative perovskite ABO.sub.3 type ferroelectric thin film is further formed on the buffer layer. The epitaxial or orientative buffer layer has a structure in which a perovskite ABO.sub.3 type thin film is formed on an MgO thin film. Also, an orientative ferroelectric thin film has such a structure that an opitaxial MgO buffer layer is formed on a single crystal Si (100) substrate, and an epitaxial or orientative perovskite ABO.sub.3 type ferroelectric thin film is formed on the buffer layer.

REFERENCES:
patent: 3962027 (1976-06-01), Bruton
patent: 4942142 (1990-07-01), Itozaki
patent: 5061687 (1991-10-01), Takada
patent: 5212620 (1993-03-01), Evans, Jr.
patent: 5323023 (1994-06-01), Fork
patent: 5418216 (1995-05-01), Fork
"Epitaxial MgO on Si(001) for Y-Ba-Cu-O thin-film growth by pulsed laser deposition", Fork et al., Appl. Phys. Lett., vol. 58, No. 20, pp. 2294-2296, May 1991.
"Growth of ceramic thin films on Si(100) using an in situ laser deposition technique", Tiwari et al., J. Appl. Phys., vol. 69, No. 12, pp. 8358-8362, Jun. 1991.

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