Transistor component having an integrated emitter resistor

Details Transistor component having an integrated emitter resistor Transistor component having an integrated emitter resistor

1998-08-05

1999-11-23

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Including additional component in same, non-isolated structure

257580, 257581, 257582, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

059905395

ABSTRACT:
A transistor component is suited for controlling large currents, even given high frequencies. The transistor component includes integrated emitter resistors which are arranged between partial-emitter regions and emitter-metal contacts. The integrated emitter resistors cause a stabilized, uniform current distribution both over the various partial-emitter regions, and within the partial-emitter regions, and bring about an improved current carrying capacity, as well as improved high-frequency properties, particularly in view of the finite magnitude of the extrinsic base resistance.

REFERENCES:
patent: 3286138 (1966-11-01), Shockley
R. Widlar et al., "A Monolithic Power Op Amp", IEEE Journal of Solid-State Circuits, vol. 23, No. 2, Apr. 1988, pp. 527-534.

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