Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1997-11-03
1999-11-23
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257537, 257516, 257379, H01L 298605
Patent
active
059905387
ABSTRACT:
The present invention teaches fabrication of a high-resistance integrated circuit diffusion resistor that uses standard CMOS process steps. By appropriate masking during ion-implantation of source/drain diffusion regions, diffusion resistors created during NMOS source/drain implant may be counterdoped during PMOS source/drain implants and vice-versa. By appropriate choice of relative concentrations of a resistor dopant and counterdopant, and choice of diffusion depths, junction diodes can be formed which create a pinched resistor by constricting the current flow. The relative dopant concentrations can also be chosen to create regions of light effective doping within the diffusion resistor rather than creating junction diodes.
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Ma Manny K. F.
Miller, Jr. James E.
Hardy David B.
Micro)n Technology, Inc.
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