Semiconductor device including a magnetoresistance effect elemen

Details Semiconductor device including a magnetoresistance effect elemen Semiconductor device including a magnetoresistance effect elemen

1997-03-31

1999-11-23

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

257422, 257427, H01L 2982, H01L 4300

Patent

active

059905336

ABSTRACT:
Disclosed is a semiconductor device with a current detector, in which a semiconductor element for current-driving a load and a current-detecting element for detecting a driving current flowing through the semiconductor element are integrated on a common semiconductor pellet, and which has: a magnetoresistance effect element which has a two layer film composed of a magnetic film and a conductive film and means for supplying the two-layer film with a constant current and which has a resistivity depending on a magnetic field generated by the driving current; wherein the magnetoresistance effect element is vertically deposited above the semiconductor element to function as the current-detecting element.

REFERENCES:
patent: 5023684 (1991-06-01), Tsunoda
patent: 5471084 (1995-11-01), Suzuki et al.

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