Multichip press-contact type semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With housing or external electrode

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Details

257688, 257785, H01L 2974, H01L 31111

Patent

active

059905018

ABSTRACT:
A multichip press-contact type semiconductor device including a plurality of semiconductor chips, a plurality of heat buffer plates, a conductive metal sheet, and first and second press-contact electrode plates. The heat buffer plates are disposed to correspond to the plurality of semiconductor chips. The conductive metal sheet is located on the plurality of heat buffer plates and substantially decreases the parasitic inductance by causing a short-circuit in electrode wiring connecting the semiconductor chips. The first press-contact electrode plate is located on the conductive metal sheet, and has column protrusions corresponding to the semiconductor chips on the surface facing the semiconductor chips. The second press-contact electrode plate is located on the side of the rear surface of the semiconductor chips. The first and second press-contact electrode plates hold therebetween the conductive metal sheet, the heat buffer plates, and the semiconductor chips, piled on each other.

REFERENCES:
patent: 4609937 (1986-09-01), Takeuchi et al.
patent: 4775916 (1988-10-01), Kouzuchi et al.
patent: 4918514 (1990-04-01), Matsuda et al.
patent: 5360985 (1994-11-01), Hiyoshi et al.
patent: 5610439 (1997-03-01), Hiyoshi et al.
patent: 5726466 (1998-03-01), Nishitani
patent: 5760425 (1998-06-01), Kobayashi

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