Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-12-22
1999-11-23
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257290, H01L 2904, H01L 31036, H01L 310376, H01L 3120
Patent
active
059904895
ABSTRACT:
For decreasing overlap widths between the gate electrode and the source/drain electrode, a photoelectric conversion apparatus is formed through a step of forming a first conductive layer on a substrate and forming a first electrode pattern therefrom, a step of forming a first insulating layer, a semiconductor layer, and a second insulating layer so as to cover the first electrode pattern, a step of patterning the second insulating layer, and a step of converting a part of a surface of the semiconductor layer into N- or P-conduction type.
REFERENCES:
patent: 4997773 (1991-03-01), Nobue
patent: 5306648 (1994-04-01), Fukaya et al.
Canon Kabushiki Kaisha
Meier Stephen D.
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