Structure for high breakdown PN diode with relatively high surfa

Details Structure for high breakdown PN diode with relatively high surfa Structure for high breakdown PN diode with relatively high surfa

1987-05-05

1987-12-15

Edlow, Martin H.

357 234, 357 238, 357 49, 357 53, H01L 2934

Patent

active

047136812

ABSTRACT:
A high voltage PN junction in which a surface layer of the more lightly doped side of the junction, adjacent to the heavily doped side of the junction, is doped more heavily than the rest of that region and with the same conductivity type. The increased doped region is formed so that an overlying field plate totally depletes it before critical field for avalanche is reached.

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