Reverse blocking type semiconductor device

Details Reverse blocking type semiconductor device Reverse blocking type semiconductor device

1985-10-15

1987-12-15

Edlow, Martin H.

357 90, 357 22, H01L 2974, H01L 2980

Patent

active

047136790

ABSTRACT:
A reverse blocking type semiconductor device capable of being rapidly turned off is disclosed in which a semiconductor substrate includes four semiconductor layers in a region sandwiched between a pair of principal surfaces in such a manner that adjacent ones of these layers are different in conductivity type from each other, one outermost layer of the layers is surrounded by the layer adjacent to the one outermost layer, the one outermost layer and the layer adjacent thereto are exposed to one principal surface, a cathode electrode kept in low-resistance contact with one outermost layer, a gate electrode is kept in low-resistance contact with the layer adjacent to the one outermost layer and lies in close proximity to the one outermost layer, an anode electrode is kept in low-resistance contact with the other outermost layer at the other principal surface, and a main operating region of the other outermost layer has an impurity concentration gradient in a direction parallel to the anode electrode.

REFERENCES:
patent: 4292646 (1981-09-01), Assour et al.
patent: 4617583 (1986-10-01), Shinohe et al.

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