Field effect transistor having an improved transistor characteri

Details Field effect transistor having an improved transistor characteri Field effect transistor having an improved transistor characteri

1995-01-30

1995-11-14

Prenty, Mark

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257607, 257615, 257745, H01L 2702

Patent

active

054669553

ABSTRACT:
A field effect transistor (20) comprises a first semiconductor layer (24) and a second semiconductor layer (25) formed on the first semiconductor layer. The first semiconductor layer is an undoped layer and is composed of InGaAs. The second semiconductor layer is composed of InAlGaP and is a doped layer in which an n-type impurity is doped. A heterojunction structure is formed between the first semiconductor layer and the second semiconductor layer.

REFERENCES:
patent: 4852111 (1989-07-01), Hayakawa et al.
IEEE Electron Device Letters, vol, EDL-6, No. 12, Dec. 1985, "High Transconductance InGaAs/AlGaAs Pseudomorphic Modulation-Doped Field-Effect Transistors", A. Ketterson, et al.
Appl. Phys. Lett. 57 (26), 24 Dec. 1990, "Theoretical gain in strained InGaAs/AlGaAs quantum wells including valence-band mixing effects", S. W. Corzine, et al.

Affiliated with

Also associated with

Rating

Field effect transistor having an improved transistor characteri does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor having an improved transistor characteri, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor having an improved transistor characteri will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1223095