Semiconductor light emitting device with short wavelength light

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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257 96, 257 97, 257 98, 372 46, 372 50, 372 99, H01L 3300

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active

054669502

ABSTRACT:
A semiconductor light emitting device. An emitting region has an active layer which emits short wavelength light and long wavelength light caused by inducing some amount of strain. A first reflective layer reflects the short wavelength light to the emitting region, and a second reflective layer reflects the long wavelength light to the emitting region and transmits the short wavelength light. The emitting region is between the first and the second reflective layers. Thereby the short wavelength light is emitted from the second reflective layer.

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"MOVPE Growth and Optical Properties of AlGaInP/GaInP Strained Single Quantum Well Structures", Makoto Kondo et al., Journal of Crystal Growth 107 (1991), pp. 578-582.
"Effect of mismatch strain on band gap in III-V semiconductors", Kuo et al., J. Appl. Phys., vol. 57, No. 12, pp. 5428-5432, Jun. 15, 1985.
"Polarized electroluminescence spectra of Ga.sub.x In.sub.1-x P/(Al.sub.0.6 Ga.sub.0.4).sub.0.5 In.sub.0.5 P quantum wells", Bour et al., Appl. Phys. Lett., vol. 62, No. 26, pp. 3458-3460, Jun. 28, 1993.

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