Silicon oxide germanium resonant tunneling

Details Silicon oxide germanium resonant tunneling Silicon oxide germanium resonant tunneling

1994-08-04

1995-11-14

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 19, 257 22, H01L 2916, H01L 29737

Patent

active

054669499

ABSTRACT:
A resonant tunneling diode (400) made of a germanium quantum well (406) with silicon oxide tunneling barriers (404, 408). The silicon oxide tunneling barriers (404, 408) plus germanium quantum well (406) may be fabricated by oxygen segregation from germanium oxides to silicon oxides.

REFERENCES:
patent: 5216262 (1993-06-01), Tsu
IEEE Trans on Elec. Dev. vol. 39 No. 1 Jan. 1992 Nayak et al, "Rapid Isothermal . . . Layers".
K. Prabhakaran, T. Nishioka, K. Sumitomo, Y. Kobayashi and T. Ogino; In Situ Oxidation of a Thin Layer of Ge on Si(001): Observation of GeO to SiO.sub.2 Transition; Applied Physics Letter 62(8); Feb. 1993; pp. 864-865.

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