Monolithic silicon opto-coupler using enhanced silicon based LED

Details Monolithic silicon opto-coupler using enhanced silicon based LED Monolithic silicon opto-coupler using enhanced silicon based LED

1994-10-11

1995-11-14

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

257 77, 257 82, 257 84, 257449, H01L 3112, H01L 3116

Patent

active

054669480

ABSTRACT:
A monolithic opto-coupler employing silicon-insulator technology in which at least two p-type silicon islands disposed on said insulating layer and a light emitting diode having enhanced light emitting efficiency is formed on one of said islands. The enhanced light emitting diode is either of the type having the surface of said p-type silicon island being electrochemically etched to provide a porous silicon layer, having carbon implanted in damaged silicon, or having an amorphous silicon-carbide layer. A silicon diode detector is formed on the other island(s) and a reflective layer is disposed over the light-emitting diode and the detectors for coupling light generated in the light emitting diode to the silicon diode detector.

REFERENCES:
patent: 4966430 (1990-10-01), Weidel
Namavar et al, "Visible Electroluminescence From Porous Silicon NP Heterojunction Diodes," Appl. Phys. Lett. 60 (20), 18 May 1992, pp. 2514-2516.
Canham et al., "1.3 .mu.m Light-Emitting Diode From Silicon Electron Irradiated at its Damage Threshold," Appl. Phys. Lett. 51(19), 9 Nov. 1987, pp. 1509-1511.
Zhiming et al., "An Improved Structure of A-SiC:H Thin Film p-i-n junction LED," 1993 International Electron Devices Meeting, 1993, pp. 221-224.
Konuma et al., "Standard-Television Compatible 648.times.487 Pixel Schottky-Barrier Infrared CCD Image Sensor," IEEE Transactions on Electron Devices, vol. 39, No. 7, Jul. 1992, pp. 1633-1636.

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