Method of producing silicon layer having surface controlled to b

Details Method of producing silicon layer having surface controlled to b Method of producing silicon layer having surface controlled to b

1997-09-08

1999-11-23

Bowers, Charles

Semiconductor device manufacturing: process

Making passive device

438381, 438795, H01L 2300, H01L 21477

Patent

active

059899697

ABSTRACT:
A method of forming a silicon layer disclosed herein includes the steps of depositing an amorphous silicon layer on a substrate, irradiating a silane gas to the substrate, and performing an annealing process in a high vacuum or in an inert gas. The amorphous silicon layer is thereby converted into a silicon layer having an uneven surface caused by hemispherical or spherical silicon grains. The annealing process may be performed while irradiating a hydrogen gas or an oxidizing gas. In this case, such a silicon layer that has an even surface is formed.

REFERENCES:
patent: 4965225 (1990-10-01), Yamagishi et al.
Watanabe A New York Cylindrical Capacitor Using Hemispherical Grained Si (HSG-SI) for 256Mb DRAMs IEEE International Electron Devices Meeting pp. 10.1.1-10.1.4, Dec. 13, 1996.
"Hemispherical Grained Silicon (HSG-Si) Formation on In-Situ Phosphorous Doped Amorphous-Si Using the Seeding Method," H. Watanabe et al., Extended Absts. of 1992 Internat'l. Conf. on Solid State Devices and Materials, Tsukuba, Japan, Aug. 26-28, 1992, pp. 422-424.
"A New Cylindrical Capacitor Using Hemispherical Grained Si (HSG-Si) for 256Mb DRAMs," H. Watanabe et al., Internat'l. Electron Devices Meeting, San Francisco, CA, Dec. 13-16, 1992, pp.259-262.
Watanabe, et al. "A New Cylindrical Capacitor Using Hemispherical Grained Si (HSG-Si) for 256Mb DRAMs," Internat'l. Electron Devices Meeting, San Francisco, CA, Dec. 13-16, 1992, pp. 10.1.1-10.1.4.

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