Method of manufacturing a metal interconnect with high resistanc

Details Method of manufacturing a metal interconnect with high resistanc Method of manufacturing a metal interconnect with high resistanc

1994-08-16

1995-11-14

Quach, T. N.

Fishing, trapping, and vermin destroying

437194, 437195, 437957, H01L 21283, H01L 21324

Patent

active

054666384

ABSTRACT:
A semiconductor device is provided which includes a conductive layer, an insulating film formed on the surface of the conductive layer, and a conductive metal interconnection layer formed on the insulating film and electrically connected to the conductive layer through a contact hole formed in a predetermine position of the insulating film. The conductive metal interconnection and the surface of the conductive layer are directly joined together and a silicon layer including a single crystal or polycrystalline silicon having a grain size of at least about 10 .mu.m is interposed between the conductive metal interconnection layer and the insulating film. The conductive metal interconnection layer becomes a single crystal or a polycrystal having a grain size of about 10 .mu.m or above under the influence of the crystalline properties of the underlying crystal of the silicon layer. Therefore, in the conductive metal interconnection layer in the entire region including the inside portion of the contact hole, essentially no grain boundaries exist. Thus, electromigration of conductive metal ions is controlled.

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patent: 5028550 (1991-07-01), Hirakawa
patent: 5084403 (1992-01-01), Matsuoka
Wolf, S., et al., Silicon Processing, vol. 1, 1986, Lattice Press, pp. 175-180.

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