Method for fabricating a thin film transistor for a liquid cryst

Fishing – trapping – and vermin destroying

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437 51, 437181, 437246, 437913, H01L 21786

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active

054666180

ABSTRACT:
A method for fabricating an LCD-TFT, which can prevent degradation of image quality of a liquid crystal display by preventing blackening of the pixel electrode due to H.sub.2 plasma at the time of deposition of a protective insulation film. The method includes the steps of forming a gate electrode on a transparent glass substrate, and forming a gate insulation film, a semiconductor layer, and an impurity doped semiconductor layer successively over the surface of the substrate. The semiconductor layer and the impurity doped semiconductor layer are patterned, leaving layers only over a part of the gate insulation film over the gate electrode. A pixel electrode is formed on a part of the gate insulation film offset from the gate electrode. A metal barrier layer and source/drain electrodes are over the surface of the substrate. The metal barrier layer and the source/drain electrodes are patterned so as to expose the impurity doped semiconductor layer over the gate electrode and to cover all the surface of the pixel electrode. The semiconductor layer under the impurity doped semiconductor layer is exposed by carrying out a selective etching of the exposed impurity doped semiconductor layer with the metal barrier layer and the source/drain electrodes used as masks. A protective insulation layer is formed over the surface of the substrate, and the pixel electrode is exposed by selectively removing the protective insulation layer, the metal barrier layer and the source/drain electrodes over the pixel electrode.

REFERENCES:
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patent: 5032531 (1991-07-01), Tsutsui et al.
patent: 5094978 (1992-03-01), Miyagaki et al.
patent: 5210045 (1993-05-01), Possin et al.
patent: 5407845 (1995-04-01), Nasu et al.

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