Profile simulation method

Details Profile simulation method Profile simulation method

1997-04-22

1999-03-30

Teska, Kevin J.

Boots, shoes, and leggings

364497, 356399, 257336, G06F 1750

Patent

active

058896864

ABSTRACT:
A profile of a developed resist is exactly simulated irrespective of whether or not a resist pattern is dense. A dissolution rate of a film to be processed, which film is provided on a substrate, is varied in accordance with a concentration of a developer and the profile of the developed resist is simulated with use of the varied dissolution rate. In addition, a spatial average of an optical image of a resist, which is averaged in the thickness direction of the resist, is calculated and the dissolution rate of the resist is modulated by using the calculated spatial average. The profile of the resist is simulated by using the modulated dissolution rate. Therefore, the profile of the resist on the substrate, which profile varies when the resist is exposed in a desired pattern and developed, can be exactly estimated.

REFERENCES:
patent: 5379225 (1995-01-01), Tazawa et al.
patent: 5434440 (1995-07-01), Yoshitomi et al.
patent: 5745388 (1998-04-01), Mimotogi et al.

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