Boots – shoes – and leggings
Patent
1997-05-12
1999-03-30
Teska, Kevin J.
Boots, shoes, and leggings
364578, 36446804, G06F 1750
Patent
active
058896783
ABSTRACT:
In a topography simulation method, the topography of a resist pattern after curing treatment can be precisely estimated without producing a complex physical model or performing parameter measurement. Specifically, in the method of estimating the topography of a resist pattern, which is formed by selectively removing a part of a resist provided on a substrate and contracts due to curing treatment, the resist pattern is divided into a plurality of cells and the cells are contracted in accordance with a volume shrinkage amount per unit volume of the resist in the curing treatment. Then, the cells located closer to an interface between the substrate and the resist pattern are flattened to a higher degree in parallel to the substrate, and the deformed cells are brought together toward a shrinkage reference line passing through a center of a line pattern and toward the substrate.
REFERENCES:
patent: 5067101 (1991-11-01), Kunikiyo et al.
patent: 5282140 (1994-01-01), Tazawa et al.
patent: 5717612 (1998-02-01), Capodieci
patent: 5745388 (1998-04-01), Mimotogi et al.
D.A. Bernard, "Simulation of Post-Exposure Bake Effects on Photolithographic Performance of a Resist Film," Philips Journal of Research, vol. 42, No. 5/6, 1987, pp. 566-582.
M. Yeung, "Modeling High Numerical Aperture Optical Lithography," Proc. SPIE, vol. 922, pp. 149-167, 1988.
M. Komatsu, "Three Dimensional Resist Profile Simulation," SPIE Optical/Laser Microlithography VI. no pg. #s, 1993.
Inoue Soichi
Mimotogi Shoji
Onishi Yasunobu
Tanaka Satoshi
Garbowski Leigh Marie
Kabushiki Kaisha Toshiba
Teska Kevin J.
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