Method of making a capacitor with reduced dielectric breakdown

Details Method of making a capacitor with reduced dielectric breakdown Method of making a capacitor with reduced dielectric breakdown

1983-11-21

1987-12-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 60, 437228, 437238, 357 51, 357 59, H01L 21265, H01L 2128

Patent

active

047133570

ABSTRACT:
In a semiconductor device having a thin insulating film of 300 .ANG. or less in thickness on which a conductive layer is provided, the conductive layer is connected to the semiconductor substrate at a position outside the active regions. With such a structure, negative charges accumulated on the conductive layer during the reactive ion etching or ion implantation process can be easily discharged to the semiconductor substrate to prevent a dielectric breakdown of the thin insulating film. In the embodiment, the thin insulating film is a dielectric film of a MOS storage capacitor of a one-transistor type memory cell and the conductive layer is the upper electrode of the MOS capacitor.

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Deliduka et al, "Monolithic Integrated Circuit Fuse Link", IBM Tech. Discl. Bull., vol. 19, No. 4, Sep. 76.

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