Method of heat treatment for reduction of dislocation density ne

Details Method of heat treatment for reduction of dislocation density ne Method of heat treatment for reduction of dislocation density ne

1986-02-28

1987-12-15

Roy, Upendra

Fishing, trapping, and vermin destroying

437247, 437939, 437949, 437 19, 437912, H01L 21265, H01L 21322

Patent

active

047133546

ABSTRACT:
In a method of manufacturing semiconductor devices wherein a III-V compound semiconductor substrate is annealed in gas atmosphere of which the gas includes an element constituting the III-V compound semiconductor substrate to reduce the dislocation density near the III-V compound semiconductor substrate surface.

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Lee et al., in Ion Implantation in Semiconductors, 1976, ed. Chernow et al., Plenum, N.Y., p. 115.
Yasunobu Ishii, "Threshold Voltage Scattering of GaAs MESFET's Fabricated on LEC-Grown Semi-Insulating Substrates, IEEE Transactions on Electron Devices, vpl. Ed.-31, No. 6, Jun. 1984, pp. 800-804.

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