Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1976-04-22
1977-08-09
Tupman, W.
Metal working
Method of mechanical manufacture
Assembling or joining
29580, 29585, 29590, 148171, B01J 1700
Patent
active
040401715
ABSTRACT:
A deep diode zener has a lamellar structured body of single crystal semiconductor material. The lamellar structure is produced by a thermal gradient zone melting process embodying the thermal migration of metal "wires" through the body to form a region of conductivity opposite to that of the body. The material of the region is recrystallized semiconductor material of the body with solid solubility of the metal "wire" to impart the desired type conductivity and resistivity to the region.
REFERENCES:
patent: 2813048 (1957-11-01), Pfann
Anthony Thomas R.
Cline Harvey E.
Cohen Joseph T.
General Electric Company
Squillaro Jerome C.
Tupman W.
Winegar Donald M.
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