Method of making a semiconductor laser device

Details Method of making a semiconductor laser device Method of making a semiconductor laser device

1991-09-23

1993-01-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 89, 437 91, 437 92, 437130, 148DIG95, H01L 2120

Patent

active

051790408

ABSTRACT:
A novel semiconductor laser device includes a P-type semiconductor substrate, an N-type InP current blocking layer on the substrate, a P-type InP buried layer of which has the same thickness as and is surrounded by the first current blocking layer, and a ridge, on the buried layer, having a double heterojunction structure therein and including a stack of a planar P-type first InP cladding layer, a planar InGaAsP active layer, and a planar N-type second InP cladding layer. The ridge has a width of the same order as that of the buried layer. A P-type InP current blocking layer is disposed on the N-type current blocking layer burying the ridge and an N-type contact layer is formed opposite and in contact with the P-type current blocking layer and the N-type cladding layer. The conductivity types of the layers can be reversed.

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