Photo mask and method for fabricating semiconductor devices usin

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

G03F 900

Patent

active

059897562

ABSTRACT:
A photoresist mask for use in a photolithographic process for fabricating semiconductor devices. The photo mask including a transparent substrate, and at least two light blocking regions. The at least two light blocking regions are separated by a first opening and arranged at a first pitch P.sub.1 satisfying the following relationship on a main surface of the transparent substrate in a first direction:

REFERENCES:
patent: 5424154 (1995-06-01), Borodovsky
patent: 5429897 (1995-07-01), Yoshioka et al.
patent: 5563012 (1996-10-01), Neisser
patent: 5733687 (1998-03-01), Tanaka et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Photo mask and method for fabricating semiconductor devices usin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photo mask and method for fabricating semiconductor devices usin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photo mask and method for fabricating semiconductor devices usin will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1219724

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.