Integrated circuit device having a bias circuit for an enhanceme

Details Integrated circuit device having a bias circuit for an enhanceme Integrated circuit device having a bias circuit for an enhanceme

1997-08-08

1999-03-30

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

327541, 327543, 323313, G05F 110

Patent

active

058894268

ABSTRACT:
Disclosed is an integrated circuit device. According to the present invention, an integrated circuit device comprises: a high frequency electronic circuit having a first enhancement transistor, to the gate of which, at least, a bias voltage is applied; and a bias circuit, including a second enhancement transistor formed on a substrate on which the first enhancement transistor is formed, and first, second and third resistors connected in series between a positive power source and a power source ground, in which a connection point of the first and the second resistors is connected to a drain of the second enhancement transistor, a connection point of the second and the third resistors is connected to a gate of the second enhancement transistor, and voltages at the connection point of the second resistor and the third resistor or at a terminal which is closer to the power source ground is applied as a bias voltage to the high frequency electronic circuit.

REFERENCES:
patent: 4833344 (1989-05-01), Moon et al.
patent: 5030903 (1991-07-01), Bernard et al.
patent: 5126653 (1992-06-01), Ganesan et al.
patent: 5327072 (1994-07-01), Savignac et al.
patent: 5552740 (1996-09-01), Casper

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