Electrical contact to buried SOI structures

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Plural recrystallized semiconductor layers

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Details

257211, 257278, 257347, 257352, H01L 2904

Patent

active

058892931

ABSTRACT:
Electrically conductive studs are employed to interconnect bulk active devices and SOI devices in a semiconductor device. Also provided is a method for fabricating such devices.

REFERENCES:
patent: 3791024 (1974-02-01), Boleky, III
patent: 4104086 (1978-08-01), Bondur et al.
patent: 4256514 (1981-03-01), Pogge
patent: 4283249 (1981-08-01), Ephrath
patent: 4473598 (1984-09-01), Ephrath et al.
patent: 4505893 (1985-03-01), Mori et al.
patent: 4889829 (1989-12-01), Kawai
patent: 4907053 (1990-03-01), Ohmi
patent: 4989057 (1991-01-01), Lu
patent: 5258318 (1993-11-01), Buti et al.
patent: 5312777 (1994-05-01), Cronin et al.
patent: 5371401 (1994-12-01), Kurita
patent: 5399507 (1995-03-01), Sun
patent: 5521401 (1996-05-01), Zamanian et al.
patent: 5606186 (1997-02-01), Noda
patent: 5612552 (1997-03-01), Owens
Verhaege et al, "Analysis of Snapback in SOI nMOSFETs and its Use for an SOI ESD Protection Circuit", 1992 IEEE International SOI Conference Proceedings, Ponte Vedra Beach Florida, Oct. 6-8, 1992, pp. 140-141.
Silvestri et al, "Reproducible Technique for Simultaneous Deposition of Poly-Epi on Oxide-Silicon", IBM Technical Disclosure Bulletin, vol. 23, No. 2, Jul. 1980, pp. 819-820.
Chan et al, "Comparison of ESD Protection Capability of SOI and BULK CMOS Output Buffers", Proceedings of the 32nd Annual International Reliability Physics Conference, Apr. 12-14, 1994.
Verhaege et al, "Double Snapback in SOI nMOSFET's and its Application for SOI ESD Protection", IEEE Electron Device Letters, vol. 14, No. 7, Jul. 1993, pp. 326-328.
Voldman et al, "CMOS-On-SOI ESD Protection Networks", Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1996, Paper 6.5.

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