Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-07-22
1999-03-30
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257187, 257 17, 257 24, 257195, H01L 2915, H01L 29772
Patent
active
058892885
ABSTRACT:
A semiconductor quantum dot device using a semiconductor quantum dot comprises a semiconductor quantum dot formed on a semiconductor wafer, a field effect transistor formed on said semiconductor wafer and comprising a gate electrode formed in a vicinity of said semiconductor quantum dot, and a coupling means to couple said gate electrode and said semiconductor quantum dot capacitively.
REFERENCES:
patent: 4581621 (1986-04-01), Reed
patent: 5291034 (1994-03-01), Allam et al.
Fujitsu Limited
Jackson, Jr. Jerome
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