Field effect transistor

Details Field effect transistor Field effect transistor

1973-10-17

1977-02-08

Lynch, Michael J.

357 23, 357 43, 357 46, 357 48, 357 89, H01L 2702

Patent

active

040074781

ABSTRACT:
An insulated gate field effect transistor having a narrow channel made by double diffusion. The double-diffused MIS transistor has a buried layer of high impurity concentration beneath the channel region except the portions of the drain contact region or drain electrode. The buried layer of high impurity concentration is of the same impurity as that of the channel region and is so located that the channel-spreading resistance is drastically reduced while the capacitance between the drain and the channel is maintained as small as possible.

REFERENCES:
patent: 3445734 (1969-05-01), Pecoraro et al.
patent: 3456168 (1969-07-01), Tatom
patent: 3461360 (1969-08-01), Barson et al.
patent: 3600647 (1971-08-01), Gray
patent: 3631310 (1971-12-01), Das
patent: 3653978 (1972-04-01), Robinson et al.
patent: 3685140 (1972-08-01), Engeler
patent: 3711940 (1973-01-01), Allison et al.

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