Patent
1985-03-28
1987-12-15
Sikes, William L.
350356, G02B 610
Patent
active
047128577
ABSTRACT:
An electro-optic device includes a niobium dioxide (NbO.sub.2) crystalline material, a light source for illuminating the crystalline material and means for applying an electrical field, which can be varied, to the crystalline material, so that the intensity of the light (or electromagnetic energy) passing through the crystalline material will be a function of the electrical field. A reactive ion-beam sputtering technique for fabricating NbO.sub.2 crystalline thin films suitable for use in these electro-optic devices is also disclosed.
REFERENCES:
Lee et al., J. Appl. Phys., 56(11), Dec. 1984, "Electrically Stimulated Optical Switching of NbO.sub.2 Thin Films," pp. 3350-3352.
Vezzoli et al., J. Appl. Phys., 54(10), Oct. 1983, "Threshold Switching Polycrystalline NbO.sub.2 . . . ", pp. 5828-5838.
Vezzoli et al., "On-State Decay in NbO.sub.2 : Relationship to Recombination and to NonlinearI-V", J. Appl. Phys., May 1980, pp. 2693-2695.
Gonzalez Frank
Honeywell Inc.
Shudy Jr. John G.
Sikes William L.
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