Plasmaless dry contact cleaning method using interhalogen compou

Details Plasmaless dry contact cleaning method using interhalogen compou Plasmaless dry contact cleaning method using interhalogen compou

1996-09-16

1999-03-30

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438723, 438743, 438906, 252 791, 134 13, H01L 21302

Patent

active

058889060

ABSTRACT:
A method of removing an oxide layer from an article. The article is located in a reaction chamber. An interhalogen compound reactive with the oxide layer is introduced into the reaction chamber. The interhalogen compound forms volatile by-product gases upon reaction with the oxide layer. For compounds that form volatile chlorides, bromides or iodides, a reducing gas, such as for example hydrogen, ammonia, amines, phosphine, silanes, and higher silanes, may optionally be added simultaneously with the interhalogen to form a volatile by-product. Unreacted interhalogen compound and volatile by-product gases are removed from the reaction chamber. In one embodiment, the temperature in the reaction chamber may be elevated prior to or after introducing the interhalogen compound. In another embodiment, a metal layer is deposited in-situ on a portion of the article within the reaction chamber.

REFERENCES:
patent: 4279691 (1981-07-01), Aoki et al.
patent: 5030319 (1991-07-01), Nishino et al.
patent: 5296095 (1994-03-01), Nabeshima et al.
patent: 5326406 (1994-07-01), Kaneko et al.
patent: 5380401 (1995-01-01), Jones et al.
patent: 5403435 (1995-04-01), Cathey et al.
patent: 5409563 (1995-04-01), Cathey
patent: 5546890 (1996-08-01), Tamaki et al.
patent: 5609721 (1997-03-01), Tsukune et al.
patent: 5716494 (1998-02-01), Imai et al.
patent: 5716495 (1998-02-01), Butterbaugh et al.
patent: 5728259 (1998-03-01), Suzawa et al.
patent: 5757456 (1998-05-01), Yamazaki et al.
Ibbotson, D.E. et al "Plasmaless dry etching of silicon with fluorine-containing compounds" J. Appl. Phys. 56 (10), pp. 2939-2942, Nov. 1984.
Saito et al., "Plasmaless cleaning process of silicon surface using cholorine triflouride," Appl. Phys. Lett., 56(12) 1119-1121 (1990).

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