Process for fabricating a semiconductor device

Details Process for fabricating a semiconductor device Process for fabricating a semiconductor device

1987-09-11

1989-08-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 60, 437 52, 437203, 437228, 437919, 357236, 357 67, H01L 2710

Patent

active

048574775

ABSTRACT:
In a process for fabricating a semiconductor device having a trench at the surface of a semiconductor substrate, a first mask layer is formed to have an opening whose side is set back from an area where the trench will be formed, a second mask layer is formed on the side of the opening of the first mask layer with an opening corresponding to the area where the trench will be formed, and an etching is performed using the first and the second mask layer as a mask to form the trench.

REFERENCES:
patent: 4353086 (1982-10-01), Jaccodine
patent: 4523369 (1985-06-01), Nagakubo
patent: 4534824 (1985-08-01), Chen
patent: 4577395 (1986-03-01), Shibata
patent: 4636281 (1987-01-01), Buiguez et al.
patent: 4693781 (1987-09-01), Leung et al.
patent: 4707218 (1987-11-01), Giammarco et al.
Bassousi "Low Temperature Methods for Rounding Silicon Nozzles," IBMTDB vol. 20, No. 2, Jul. 77, 810-11.

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