Method for producing semiconductor matrix of light-emitting elem

Details Method for producing semiconductor matrix of light-emitting elem Method for producing semiconductor matrix of light-emitting elem

1975-06-19

1977-10-25

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148171, 148187, 357 16, 357 17, 357 18, 357 48, H01L 21265, H01L 21324, H01L 2176

Patent

active

040554430

ABSTRACT:
Disclosure is made of a method for producing a semiconductor array of light-emitting elements, whereby a mask is first applied onto an n-layer of an epitaxial structure consisting of a substrate GaAs of the p.sup.+ -type of conductivity with layers Ga.sub.1-x AlxAs of the p-type and Ga.sub.1-y AlyAs of the n-type applied successively onto it, which layers form a light-emitting p-n junction. The mask is produced by applying a photoresist layer onto the n-layer with subsequent exposure and etching. This is followed by introducing into the n-type layer, through said mask, an acceptor addition by means of ion implantation. After this the photoresist layer is removed, and a layer of SiO.sub.2 is applied onto the uncovered n-layer. After this diffusion heat treatment is carried out for a time and at a temperature sufficient to produce in the n-layer regions of the p-type of conductivity whose depth is at least equal to the thickness of the n-layer.

REFERENCES:
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patent: 3752713 (1973-08-01), Sakuta et al.
patent: 3912556 (1975-10-01), Grenon et al.
patent: 3958265 (1976-05-01), Charmakadze et al.
Blum et al., "Formation of Integrated - Led's" I.B.M. Tech. Discl. Bull., vol. 15, No. 2, July 1972, pp. 441-442.
Wolfe et al. Eds. "Applied Solid State Science," vol. 1, 1969, Academic Press, pp. 138, 139 and 326-328.

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