Submicron isolated, released resistor structure

Details Submicron isolated, released resistor structure Submicron isolated, released resistor structure

1992-07-02

1994-02-15

Lateef, Marvin M.

Electrical resistors

With base extending along resistance element

Resistance element and/or terminals printed or marked on base

338 64, 338314, H01C 1012

Patent

active

052870820

ABSTRACT:
A submicron resistor having negligible parasitic capacitance includes an isolated released beam carried on a single crystal silicon wafer. The resistor is fabricated by defining a resistor region in the substrate, doping the region to produce the desired resistivity, and etching around the region to produce a resistive island. The island is then isolated from the substrate by oxidation, and is released by removing the oxide to produce an isolated, released resistor beam.

REFERENCES:
patent: 4437226 (1984-03-01), Soclof
patent: 4648173 (1987-03-01), Malaviya
patent: 4668865 (1987-05-01), Gimzewski et al.
patent: 4670092 (1987-06-01), Motamedi
patent: 4685198 (1987-08-01), Kawakita et al.
patent: 4764799 (1988-08-01), Malaviya
patent: 4776924 (1988-10-01), Delapierre
patent: 4845048 (1989-07-01), Tamaki et al.
patent: 5043577 (1991-08-01), Pohl et al.
"Formation of submicron silicon-on-insulator structures by lateral oxidation of substrate-silicon islands" Arney and MacDonald, J. Vac. Sci. Technol. B 6(1) Jan./Feb. 1988 pp. 341-345.
"TEM Characterization of defect configurations in Submicron SOI Structures" N. D. Theodore et al; Preprint: Proc. 6th Int. Conf. on Microscopy of Semiconducting Materials, Oxford, UK, Apr. 10-13, 1989.

Affiliated with

Also associated with

Rating

Submicron isolated, released resistor structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Submicron isolated, released resistor structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Submicron isolated, released resistor structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1210357