Method of forming a silicon film

Details Method of forming a silicon film Method of forming a silicon film

1996-08-20

1999-03-30

Utech, Benjamin

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

438398, 438964, 438486, 438491, H01L 21205, H01L 21285, H01L 21324, C30B 2814

Patent

active

058882952

ABSTRACT:
A method of forming a silicon layer having a roughened outer surface includes, a) providing a substantially amorphous silicon layer over a substrate, the amorphous silicon layer having an outer surface; b) providing a seeding layer over the amorphous silicon layer outer surface; and c) annealing the amorphous silicon layer and seeding layer under temperature and pressure conditions effective to transform said amorphous layer into a silicon layer having a roughened outer surface. The amorphous silicon layer is preferably provided by providing a first silicon source gas (i.e., silane) within a chemical vapor deposition reactor under first reactive temperature and pressure conditions effective to deposit a substantially amorphous first silicon layer on the substrate. After the amorphous silicon layer deposition, a second silicon source gas (i.e., silane) is provided within the chemical vapor deposition reactor under second reactive temperature and pressure conditions effective to deposit a seeding second layer of polysilicon on the amorphous first silicon layer, the second reactive conditions also being effective to maintain the first silicon layer substantially amorphous during the second silicon layer deposition. Then, the first and second silicon layers are annealed under temperature and pressure conditions effective to transform said amorphous first layer into a silicon layer having a roughened outer surface.

REFERENCES:
patent: 5191509 (1993-03-01), Wen
patent: 5266514 (1993-11-01), Tuan et al.
patent: 5326722 (1994-07-01), Huang
patent: 5342800 (1994-08-01), Jun
patent: 5366917 (1994-11-01), Watanabe et al.
patent: 5385863 (1995-01-01), Tatsumi et al.
patent: 5429972 (1995-07-01), Anjum et al.
patent: 5691249 (1997-11-01), Watanabe et al.
patent: 5837569 (1998-11-01), Makita et al.
patent: 5837580 (1998-11-01), Thakur et al.
Joubert, P., et al., "The Effect of Low Pressure on the Structure of LPCVD Polycrystalline Silicon Films", Journal of the Electrochemical Society, 134 (10), 2541-45, Oct. 1987.
Sakai et al., "Novel Seeding Method for the Growth of Polycrystalline Si Films With Hemispherical Grains", Applied Physics LEtters, vol. 61, No. 2, 13 Jul. 1992. pp. 159-161.
Watanabe et al., "Hemispherical Grained Si Formation on in-situ Phosphorous Doped Amorphous-Si Electrode for 256 Mb DRAM Capacitor", IEEE Electronic Devices Society Publication, vol. 42, No. 7, pp. Jul., 1995, 1247-1254.

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