Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1995-10-10
1998-07-07
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257448, 257457, 257 81, 257 82, H01L 3112
Patent
active
057773904
ABSTRACT:
An improved metal-semiconductor-metal (MSM) photodiode, specifically a new high responsivity AND high bandwidth photodetector, resulting in a high gain-bandwidth product is disclosed. The disclosed device is an MSM photodiode in which the anode and cathode are made of different materials of differing opacity and possibly including different electrode dimensions as well. Using an opaque anode and a transparent cathode reduces surface reflections off the opaque electrodes allowing more light to be absorbed within the active semiconductor region. However, it concurrently keeps the transit distance for the slower moving holes to a minimum. Thus, the long tail in the impulse response due to hole collection is minimized, resulting in increased bandwidth.
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Berger Paul R.
Gao Wei
The University of Delaware
Whitehead Carl W.
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