Fishing – trapping – and vermin destroying
Patent
1992-08-26
1994-02-15
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 33, 437 90, 437 89, 437201, H01L 21265
Patent
active
052866610
ABSTRACT:
A bipolar transistor (10) is formed by using low temperature epitaxial deposition in order to form a base layer (14) of the transistor (10). A dielectric (16, 17, 18) is applied to the base layer (14) and an emitter opening (21) having sloping sidewalls is formed in the dielectric (16, 17, 18). Low temperature epitaxial deposition is also used for forming an emitter (24) within the emitter opening (21). The emitter opening (21) forms sloping sidewalls on the emitter (24) thereby forming an emitter overhang that overlies the base layer (14). The width (26) of the emitter overhang determines an extrinsic base width of the transistor (10).
REFERENCES:
patent: 3889359 (1975-06-01), Rand
patent: 4889824 (1989-12-01), Solle et al.
patent: 4954457 (1990-09-01), Jambotka
patent: 4962053 (1990-10-01), Spratt et al.
patent: 5073508 (1991-12-01), Villalon
patent: 5166081 (1992-11-01), Inada et al.
Ganin et al., "Epitaxial-Base Double-Poly Self-Aligned Bipolar Transistor", International Electron Dev. Metting, pp. 603-606, Dec. 1990.
Martin et al., "Polysilicon Emitter p-n-p Transistor", IEEE Trans. on Elec. Dev., vol. 36, No. 6, pp. 1139-1144, Jun. 1989.
de Fresart Edouard D.
Steele John W.
Barbee Joe E.
Hearn Brian E.
Hightower Robert F.
Motorola Inc.
Nguyen Tuan
LandOfFree
Method of forming a bipolar transistor having an emitter overhan does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a bipolar transistor having an emitter overhan, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a bipolar transistor having an emitter overhan will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1206535