Method of manufacturing a semiconductor device of an anode short

Details Method of manufacturing a semiconductor device of an anode short Method of manufacturing a semiconductor device of an anode short

1993-06-11

1994-02-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437152, 148DIG126, H01L 21332

Patent

active

052866556

ABSTRACT:
The present invention provides a method of manufacturing a semiconductor device, comprising the steps of selectively diffusing an impurity of a first conductivity type and another impurity of a second conductivity type into a main surface region of a semiconductor substrate so as to form first semiconductor regions of the first conductivity type and second semiconductor regions of the second conductivity type, forming a first semiconductor layer of the second conductivity type on the semiconductor substrate, said first semiconductor layer being of at least a single layer structure, forming element regions of the first and second conductivity types by thermal diffusion of impurities into the first semiconductor layer, and polishing the opposite main surface of the semiconductor substrate to expose the first semiconductor regions of the first conductivity type and the second semiconductor regions of the second conductivity type. The first semiconductor layer may be of a laminate structure consisting of a plurality of semiconductor layers differing from each other in the impurity concentration.

REFERENCES:
patent: 4757025 (1988-07-01), Bender
patent: 4920062 (1990-04-01), Tsunoda
patent: 5178370 (1993-01-01), Clark et al.
patent: 5183769 (1993-02-01), Rutter et al.

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