Method for forming a strong dielectric film by the sol-gel techn

Details Method for forming a strong dielectric film by the sol-gel techn Method for forming a strong dielectric film by the sol-gel techn

1996-02-15

1998-07-07

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 47, 437 52, 437919, H01L 2170

Patent

active

057767882

ABSTRACT:
A method for forming a PZT strong dielectric film by the sol-gel technique, in which the thickness of the film is substantially no greater than 1000 .ANG.. In another aspect, the drying temperature of the raw material sol-gel solution for forming the PZT dielectric film is maintained within the range of 130.degree.-200.degree. C., and is particularly set lower than the boiling point of the stabilizer contained in the sol-gel raw material and higher than the boiling point of the solvent contained in the sol-gel raw material. As a result of performing the oxidative sintering treatment at a temperature at which perovskite crystals form, it becomes possible to readily form thin films exhibiting a (100) crystal orientation in particular. Additionally, completely crack-free thick films can be formed.

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