Nonselective germanium deposition by UHV/CVD

Details Nonselective germanium deposition by UHV/CVD Nonselective germanium deposition by UHV/CVD

1991-10-21

1994-02-15

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Methods

Surface bonding and/or assembly therefor

156603, 156613, 437946, C30B 2500

Patent

active

052863344

ABSTRACT:
A method of depositing Ge on a Si substrate in a reaction chamber includes the steps of: precleaning the substrate; evacuating the chamber to a pressure below 10.sup.-7 Torr; heating the substrate to 300.degree.-600.degree. C.; and providing a GeH.sub.4 /B.sub.2 H.sub.6 /He mixture of gas with a GeH.sub.4 partial pressure of 2-50 mTorr and a B.sub.2 H.sub.6 partial pressure of 0.08 to 2 mTorr.

REFERENCES:
patent: 2780569 (1957-02-01), Hewlett
patent: 3473978 (1969-10-01), Jackson, Jr.
patent: 4220959 (1980-09-01), Kroger
patent: 4278830 (1981-07-01), Frosch et al.
patent: 4321099 (1982-03-01), Frosch et al.
patent: 4521794 (1985-06-01), Murase et al.
patent: 4529455 (1985-07-01), Bean
patent: 4681640 (1987-07-01), Stanley
patent: 4861393 (1989-08-01), Bean
"The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layers", by M. Maenpaa, et al., J. Appl. Phys., Feb. 1982, pp. 1076-1083.
"Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition", by B. S. Meyerson, Appl. Phys. Lett., 24 Mar. 1986, pp. 797-799.
"Low Temperature Silicon Epitaxy by Hot Wall Ultrahigh Vacuum/Low Pressure Chemical Vapor Deposition Techniques: Surface Optimization", by B. S. Meyerson, et al., Journal of the Electrochemical Society, vol. 133, No. 6, Jun. 1986, pp. 1232-1235.
"Cooperative growth phenomena in silicon/germanium low-temperature epitaxy", by B. S. Meyerson, et al., Appl. Phys. Lett. 53, 19 Dec. 1988, pp. 2555-2557.
"Growth of Epitaxial Layers of Ge.sub.x Si.sub.1-x by UHV/CVD", by Marco Racanelli, et al., Mat. Res. Soc. Symp. Proc., vol. 198, pp. 527-532 (1990).
"Influence of surfactants in Ge and Si epitaxy on Si(001)", by M. Copel, et al., Physical Review B, vol. 42, No. 18, 15 Dec. 1990-II, pp. 11682-11690.

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