Sputtering apparatus

Details Sputtering apparatus Sputtering apparatus

1983-10-05

1986-02-11

Demers, Arthur P.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204192R, C23C 1500

Patent

active

045697450

ABSTRACT:
A sputtering apparatus having a vacuum treatment chamber, a backing plate arranged within the chamber, a sputtering target secured to the backing plate, evacuation means and a voltage source for applying a voltage to the sputtering target. The peripheral portion of the backing plate adjacent to the sputtering target is covered with a material having a high heat resistance temperature and excellent electrical insulating properties or the same material as the material of the sputtering target. The peripheral edge of the sputtering target can also be made larger than the peripheral edge of the backing plate so that the peripheral portion of the backing plate adjacent to the sputtering target is covered with or hidden by the sputtering target. In this sputtering apparatus, at least the peripheral portion of the backing plate adjacent to the sputtering target is not sputtered, and therefore, a metal film formed on a substrate by sputtering is not contaminated and this metal film is, therefore, easily dry-etched.

REFERENCES:
patent: 4419201 (1983-12-01), Levinstein et al.
Vossen et al. R.C.A. Review Jun. 1970 pp. 293-305.
Entner et al. IBM Tech. Bulletin 18(1975) pp. 1284-1285.
Lester et al. IBM Tech. Bulletin 20(1977) pp. 1177-1178.
Lue Vacuum 32(1982) pp. 363-367.
Nathanson et al. J. O. S. A. 29(1939) pp. 417-426.
Maissel et al. Handbook of Thin Film Technology McGraw-Hill, N.Y., N.Y., pp. 4-36.
Vossen et al., (II) Thin Film Processes; Academic Press, N.Y., N.Y., 1978, p. 33.

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