P.sup.+ N Gallium phosphide photodiodes

Details P.sup.+ N Gallium phosphide photodiodes P.sup.+ N Gallium phosphide photodiodes

1980-09-09

1982-12-14

Edlow, Martin H.

H01L 2714

Patent

active

043640770

ABSTRACT:
A photodiode detector apparatus having a Gallium Phosphide ion implantation junction thereon to provide high quantum efficiency at wavelengths equal to or less than 0.5 micron incident wavelength while utilizing a shallow junction.

REFERENCES:
patent: 3900865 (1980-08-01), Schaefer
patent: 3958143 (1976-05-01), Bell
patent: 4141756 (1982-02-01), Chiang et al.

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