Oriented ferroelectric thin film element

Details Oriented ferroelectric thin film element Oriented ferroelectric thin film element

Filed on

1995-10-25

Date issued

1998-07-07

Examiner

Krynski, William

Patent Class

Stock material or miscellaneous articles

SubClass

Composite

SubSubClass

Of inorganic material

Other Related Categories

428210, 428689, 428701, 428702, 428901, 505701, B32B 900

Type

Patent

Status

active

Patent number

057766215

Description

ABSTRACT:
An oriented ferroelectric thin film element has a structure in which an epitaxial or oriented buffer thin film is formed on a semiconductor single crystal substrate, an epitaxial or oriented metallic thin film is formed on the buffer thin film, and an epitaxial or oriented ferroelectric thin film is further formed on the metallic thin film. The semiconductor single crystal substrate may be made of Si or GaAs, the buffer thin film may be made of MgO or MgAl.sub.2 O.sub.4, the metallic thin film may be made of Pd, Pt, Al, Au, or Ag, and the ferroelectric thin film has an ABO.sub.3 perovskite crystal structure.

REFERENCES:
patent: 3808674 (1974-05-01), Francombe
patent: 4211821 (1980-07-01), Hadni
patent: 5225031 (1993-07-01), McKee
patent: 5270298 (1993-12-01), Ramesh
patent: 5317446 (1994-05-01), Mir
patent: 5323023 (1994-06-01), Fork
patent: 5403673 (1995-04-01), Haga
patent: 5514484 (1996-05-01), Nashimoto
Iijima, J Appl. Phys. 60(1) 7-86, pp. 361-367, 1986.

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